博士，助理研究员，北京市高级职称，清华大学直流研究中心功率半导体器件产品开发负责人，入选中国博士后创新人才支持计划。主要从事高压大功率半导体器件驱动技术研究，成功研制开断电流最大、首个分体式、首个芯片化流控型、高压自取能等多个标志性功率半导体器件新型驱动，在10余项电网工程应用，入选“科创中国”国际创新合作榜单。主持国家自然科学基金项目1项、中国博士后科学基金项目1项。参与国家自然科学基金重点项目、国家重点研发计划等重大项目10余项，发表SCI论文30余篇，入选2024中国知网高被引学者，授权发明专利30余项，参与编制国家标准2项、行业标准4项；获IET能源创新奖、中国专利优秀奖、发明创业项目奖等5项奖励。

2025.07 – 至今 清华大学电力国重助理研究员

2019.07 – 2021.10 清华大学电机系博士后、助理研究员

2017.11 – 2018.04 德国亚琛工业大学 访问学者

2014.09 – 2021.07 清华大学电机系 电气工程 博士

2010.09 – 2014.07 清华大学电机系 电气工程及其自动化 学士

2024年 日内瓦发明银奖

2023年 中国发明协会发明创业奖项目奖

2022年 日内瓦发明银奖

2022年 国家知识产权局中国专利优秀奖

2021年 IET E&T Innovation Awards

2022.01-2024.12，国家自然科学基金（青年），大功率IGCT器件关断瞬态的电流动态分布机理研究与均流优化，项目负责人

2020.01-2021.07，中国博士后科学基金（面上），高压大电流关断用IETO器件的理论建模及参数优化，项目负责人

2024.12-2028.11，国家科技重大专项，超大城市电网柔性多端互联示范工程，骨干

2022.01-2025.12，国家自然科学基金集成项目，抵御直流输电换相失败的混合换流原理、新型可关断器件及其关键技术研究，骨干

2021.12-2025.11，国家重点研发计划，高压大功率可关断器件驱动芯片关键技术，骨干

2019.01-2023.12，国家自然科学基金重点项目，万安级大电流单次关断用IGCT器件的理论建模、参数优化与性能调控，骨干

[1] Chen S, Yu Z, Chen Z*, et al. “A Sub-Nanosecond Delay Floating Voltage Level Shifter With 300 V/ns Power Supply Slew Tolerance,” in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 72, no. 11, pp. 6762-6771, 2025.

[2] Chen S, Yu Z, Chen Z*, et al. “A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver.” in High Voltage, vol. 10, no. 3, pp. 533-545, 2025.

[3] Shang J, Chen Z*, Zhao B, et al. “A 6-in Integrated Emitter Turn-OFF Thyristor with 17.5 kA Turn-OFF Current.” in IEEE Transactions on Power Electronics, vol. 38, no. 7, pp. 8419-8429, 2023.

[4] Xu C, Yu Z, Chen Z, et al. “Comprehensive Analysis and Experiments of RB-IGCT, IGCT With Fast Recovery Diode and Standard Recovery Diode in Hybrid Line-Commutated Converter for Commutation Failure Mitigation.” IEEE Transactions on Industrial Electronics, vol. 70, no. 2, pp. 1126-1139, 2023.

[5] Shang J, Chen Z*, Zhao B, et al. “A Novel Detachable Gate Driver Unit with Ultralow Inductance for Integrated Gate Commutated Thyristor.” In IEEE Transactions on Power Electronics, vol. 37, no. 12, pp. 14000-14004, 2022.

[6] Zhou W, Yu Z, Chen Z, et al. “P+ Base Doping Optimization of 6-in Gate Commutated Thyristors for Hybrid DC Circuit Breaker Application” in IEEE Transactions on Electron Devices, vol. 69, no. 1, pp, 262-270, 2022.

[7] Zhou W, Yu Z, Chen Z, et al. “Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part II: Failure Mechanism and Short Circuit Characteristics.” in IEEE Transactions on Power Electronics vol. 37, no. 5, pp. 5562-5573, 2022.

[8] Chen Z, Yu Z, Zhao B, et al. “An Advanced 4-in Integrated Emitter Turn-OFF Thyristor With Ultralow Commutation Impedance to Achieve 8 kA Turn-OFF Capability: Comprehensive Analysis, Design, and Experiments.” in IEEE Transactions on Industrial Electronics, vol. 68, no. 10, pp. 9444-9454, 2021.

[9] Zhang X, Yu Z, Chen Z, et al. “Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-kV High-Voltage DC Breaker.” in IEEE Transactions on Power Electronics, vol. 35, no. 2, pp. 1165-1170, 2020.

[10] Chen Z, Yu Z, Liu X, et al. “Stray Impedance Measurement and Improvement of High Power IGCT Gate Driver Units.” in IEEE Transactions on Power Electronics, vol. 34, no. 7, pp. 6639-6647, 2019.

[11] Zhang X, Yu. Z, Chen Z, et al. “Modular Design Methodology of DC Breaker Based on Discrete Metal Oxide Varistors With Series Power Electronic Devices for HVdc Application.” in IEEE Transactions on Industrial Electronics, vol. 66, no. 10, pp. 7653-7662, 2019.

[12] Chen Z, Yu Z, Zhang X, et al. “Analysis and Experiments for IGBT, IEGT, and IGCT in Hybrid DC Circuit Breaker.” in IEEE Transactions on Industrial Electronics, vol. 65, no. 4, pp. 2883-2892, 2018.